Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS

Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS

A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.

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Bibliographische Detailangaben
Hauptverfasser: Fenigstein Amos, Lahav Assaf
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.