Nitride film formed by plasma-enhanced and thermal atomic layer deposition process

Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.