Metrology pattern layout and method of use thereof

A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged...

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Bibliographische Detailangaben
Hauptverfasser:	Ning Guoxiang, Litt Lloyd C, Ackmann Paul, Ueberreiter Guido
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.