Semiconductor device with reduced emitter efficiency

A method of producing a semiconductor device includes providing a semiconductor body having a front side 10-1 and a back side, wherein the semiconductor body includes a drift region having dopants of a first conductivity type and a body region having dopants of a second conductivity type complementa...

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Bibliographische Detailangaben

Hauptverfasser:	Wagner Wolfgang, Baumgartl Johannes, Komarnitskyy Volodymyr
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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