Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a multi-channel active pattern including germanium and an inner region and an outer region, the outer region formed along a profile of the inner region, and a germanium fraction of the outer r...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a multi-channel active pattern including germanium and an inner region and an outer region, the outer region formed along a profile of the inner region, and a germanium fraction of the outer region being smaller than a germanium fraction of the inner region. A gate electrode intersects the multi-channel active pattern. |
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