Bonded wafer structures

The present disclosure includes bonded wafer structures and methods of forming bonded wafer structures. One example of a forming a bonded wafer structure includes providing a first wafer (202, 302) and a second wafer (204, 304) to be bonded together via a bonding process that has a predetermined waf...

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Bibliographische Detailangaben
Hauptverfasser:	Alley Rodney L, Milligan Donald J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present disclosure includes bonded wafer structures and methods of forming bonded wafer structures. One example of a forming a bonded wafer structure includes providing a first wafer (202, 302) and a second wafer (204, 304) to be bonded together via a bonding process that has a predetermined wafer gap (216, 316) associated therewith, and forming a mesa (215, 315, 415) on the first wafer (202, 302) prior to bonding the first wafer (202, 302) and the second wafer (204, 304) together, wherein a height (220, 320, 420) of the mesa (215, 315, 415) is determined based on a target element gap (217, 317) associated with the bonded wafer structure.