Method of forming aligned pattern in pattern formation region by using imprint process

A method of forming a pattern by using an imprint process includes: forming an adhesion promoting layer only in a pattern formation region on a substrate; coating a resin to cover the substrate and the adhesion promoting layer; transferring a pattern of a stamp mold to the resin covering the substra...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bae Jihyun, Lee Sunghoon, Yoon Ilsun, Hahm Sukgyu, Kim Dongouk, Chung Jaeseung, Park Joonyong, Shin Bongsu, Ok Jong G
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Bae Jihyun
Lee Sunghoon
Yoon Ilsun
Hahm Sukgyu
Kim Dongouk
Chung Jaeseung
Park Joonyong
Shin Bongsu
Ok Jong G
description A method of forming a pattern by using an imprint process includes: forming an adhesion promoting layer only in a pattern formation region on a substrate; coating a resin to cover the substrate and the adhesion promoting layer; transferring a pattern of a stamp mold to the resin covering the substrate and the adhesion promoting layer, by pressing the stamp mold onto the resin; irradiating ultraviolet light onto the resin covering the substrate and the adhesion promoting layer, to cure the resin and form a pattern of the cured resin to correspond to the pattern of the stamp mold, on the substrate; and detaching the stamp mold from the substrate, to leave a portion of the cured resin pattern only on the adhesion promoting layer on the substrate and to remove a remaining portion of the cured resin pattern from the substrate.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9855703B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9855703B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9855703B23</originalsourceid><addsrcrecordid>eNrjZAjzTS3JyE9RyE9TSMsvys3MS1dIzMlMz0tNUShILClJLcpTyMyDM0FKEksy8_MUilLTQVRSpUJpMUhTZm5BUWZeiUJBUX5yanExDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2JDw22tDA1NTcwdjIyJkIJAM_xOb4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming aligned pattern in pattern formation region by using imprint process</title><source>esp@cenet</source><creator>Bae Jihyun ; Lee Sunghoon ; Yoon Ilsun ; Hahm Sukgyu ; Kim Dongouk ; Chung Jaeseung ; Park Joonyong ; Shin Bongsu ; Ok Jong G</creator><creatorcontrib>Bae Jihyun ; Lee Sunghoon ; Yoon Ilsun ; Hahm Sukgyu ; Kim Dongouk ; Chung Jaeseung ; Park Joonyong ; Shin Bongsu ; Ok Jong G</creatorcontrib><description>A method of forming a pattern by using an imprint process includes: forming an adhesion promoting layer only in a pattern formation region on a substrate; coating a resin to cover the substrate and the adhesion promoting layer; transferring a pattern of a stamp mold to the resin covering the substrate and the adhesion promoting layer, by pressing the stamp mold onto the resin; irradiating ultraviolet light onto the resin covering the substrate and the adhesion promoting layer, to cure the resin and form a pattern of the cured resin to correspond to the pattern of the stamp mold, on the substrate; and detaching the stamp mold from the substrate, to leave a portion of the cured resin pattern only on the adhesion promoting layer on the substrate and to remove a remaining portion of the cured resin pattern from the substrate.</description><language>eng</language><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR ; SHAPING OR JOINING OF PLASTICS ; TRANSPORTING ; WORKING OF PLASTICS ; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180102&amp;DB=EPODOC&amp;CC=US&amp;NR=9855703B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25573,76557</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180102&amp;DB=EPODOC&amp;CC=US&amp;NR=9855703B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Bae Jihyun</creatorcontrib><creatorcontrib>Lee Sunghoon</creatorcontrib><creatorcontrib>Yoon Ilsun</creatorcontrib><creatorcontrib>Hahm Sukgyu</creatorcontrib><creatorcontrib>Kim Dongouk</creatorcontrib><creatorcontrib>Chung Jaeseung</creatorcontrib><creatorcontrib>Park Joonyong</creatorcontrib><creatorcontrib>Shin Bongsu</creatorcontrib><creatorcontrib>Ok Jong G</creatorcontrib><title>Method of forming aligned pattern in pattern formation region by using imprint process</title><description>A method of forming a pattern by using an imprint process includes: forming an adhesion promoting layer only in a pattern formation region on a substrate; coating a resin to cover the substrate and the adhesion promoting layer; transferring a pattern of a stamp mold to the resin covering the substrate and the adhesion promoting layer, by pressing the stamp mold onto the resin; irradiating ultraviolet light onto the resin covering the substrate and the adhesion promoting layer, to cure the resin and form a pattern of the cured resin to correspond to the pattern of the stamp mold, on the substrate; and detaching the stamp mold from the substrate, to leave a portion of the cured resin pattern only on the adhesion promoting layer on the substrate and to remove a remaining portion of the cured resin pattern from the substrate.</description><subject>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</subject><subject>SHAPING OR JOINING OF PLASTICS</subject><subject>TRANSPORTING</subject><subject>WORKING OF PLASTICS</subject><subject>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjzTS3JyE9RyE9TSMsvys3MS1dIzMlMz0tNUShILClJLcpTyMyDM0FKEksy8_MUilLTQVRSpUJpMUhTZm5BUWZeiUJBUX5yanExDwNrWmJOcSovlOZmUHBzDXH20E0tyI9PLS5ITE7NSy2JDw22tDA1NTcwdjIyJkIJAM_xOb4</recordid><startdate>20180102</startdate><enddate>20180102</enddate><creator>Bae Jihyun</creator><creator>Lee Sunghoon</creator><creator>Yoon Ilsun</creator><creator>Hahm Sukgyu</creator><creator>Kim Dongouk</creator><creator>Chung Jaeseung</creator><creator>Park Joonyong</creator><creator>Shin Bongsu</creator><creator>Ok Jong G</creator><scope>EVB</scope></search><sort><creationdate>20180102</creationdate><title>Method of forming aligned pattern in pattern formation region by using imprint process</title><author>Bae Jihyun ; Lee Sunghoon ; Yoon Ilsun ; Hahm Sukgyu ; Kim Dongouk ; Chung Jaeseung ; Park Joonyong ; Shin Bongsu ; Ok Jong G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9855703B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR</topic><topic>SHAPING OR JOINING OF PLASTICS</topic><topic>TRANSPORTING</topic><topic>WORKING OF PLASTICS</topic><topic>WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Bae Jihyun</creatorcontrib><creatorcontrib>Lee Sunghoon</creatorcontrib><creatorcontrib>Yoon Ilsun</creatorcontrib><creatorcontrib>Hahm Sukgyu</creatorcontrib><creatorcontrib>Kim Dongouk</creatorcontrib><creatorcontrib>Chung Jaeseung</creatorcontrib><creatorcontrib>Park Joonyong</creatorcontrib><creatorcontrib>Shin Bongsu</creatorcontrib><creatorcontrib>Ok Jong G</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bae Jihyun</au><au>Lee Sunghoon</au><au>Yoon Ilsun</au><au>Hahm Sukgyu</au><au>Kim Dongouk</au><au>Chung Jaeseung</au><au>Park Joonyong</au><au>Shin Bongsu</au><au>Ok Jong G</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming aligned pattern in pattern formation region by using imprint process</title><date>2018-01-02</date><risdate>2018</risdate><abstract>A method of forming a pattern by using an imprint process includes: forming an adhesion promoting layer only in a pattern formation region on a substrate; coating a resin to cover the substrate and the adhesion promoting layer; transferring a pattern of a stamp mold to the resin covering the substrate and the adhesion promoting layer, by pressing the stamp mold onto the resin; irradiating ultraviolet light onto the resin covering the substrate and the adhesion promoting layer, to cure the resin and form a pattern of the cured resin to correspond to the pattern of the stamp mold, on the substrate; and detaching the stamp mold from the substrate, to leave a portion of the cured resin pattern only on the adhesion promoting layer on the substrate and to remove a remaining portion of the cured resin pattern from the substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US9855703B2
source esp@cenet
subjects AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR
SHAPING OR JOINING OF PLASTICS
TRANSPORTING
WORKING OF PLASTICS
WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
title Method of forming aligned pattern in pattern formation region by using imprint process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-02T16%3A04%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Bae%20Jihyun&rft.date=2018-01-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS9855703B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true