Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit

A method including providing a semiconductor structure having a dielectric stack, hardmask stack, and mandrel layer disposed thereon. An array of mandrels is patterned into the mandrel layer. Mandrel spacers are formed self-aligned on sidewalls of the mandrels. A gapfill layer is disposed and planarized over the semiconductor structure. Non-mandrel pillars are formed over the planarized gapfill layer. Exposed portions of the gapfill layer are etched to form non-mandrel plugs preserved by the pillars. The pillars are removed to form a pattern, the pattern including the non-mandrel plugs. The pattern is utilized to form an array of alternating mandrel and non-mandrel metal interconnection lines in the dielectric stack. The array includes non-mandrel dielectric structures formed from the non-mandrel plugs.