Resistive memory devices with an oxygen-supplying layer

A resistive memory device includes a bottom electrode and a top electrode crossing the bottom electrode at a non-zero angle. A switching region operatively contacts the bottom electrode and the top electrode. The switching region defines a current path between the bottom electrode and the top electrode in an ON state. An oxygen-supplying layer operatively contacts a portion of the switching region. The oxygen-supplying layer is positioned orthogonally to the current path and to the switching region.