Memristor programming error reduction

Error reduction in memristor programming includes programming an n-th switched memristor of a switched memristor array with an error-corrected target resistance. The error-corrected target resistance is a function of a resistance error of the switched memristor array and a target resistance of the n...

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1. Verfasser: Buchanan Brent
Format: Patent
Sprache:eng
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Zusammenfassung:Error reduction in memristor programming includes programming an n-th switched memristor of a switched memristor array with an error-corrected target resistance. The error-corrected target resistance is a function of a resistance error of the switched memristor array and a target resistance of the n-th switched memristor. The n-th switched memristor programming is to reduce a total resistance error of the switched memristor array.