Method of manufacturing a semiconductor device having a trench at least partially filled with a conductive material in a semiconductor substrate
A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a co...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing a semiconductor device includes forming a first trench in a semiconductor substrate from a first side, forming a semiconductor layer adjoining the semiconductor substrate at the first side, the semiconductor layer capping the first trench at the first side, and forming a contact at a second side of the semiconductor substrate opposite to the first side. |
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