Semiconductor device

Disclosed is a semiconductor device including a plurality of conductive patterns formed on a semiconductor substrate while being spaced apart from one another at a preset interval and extending in a first direction, and a plurality of junction areas formed by doping impurities in the semiconductor substrate and provided between the conductive patterns. The plurality of junction areas includes transistor junction areas and dummy junction areas. Each of the transistor junction areas is connected through a contact to a source/drain electrode, and the contact is formed at a higher level than the transistor junction areas. Each of the dummy junction areas is connected to a bias contact formed at higher level than the dummy junction areas. A well bias voltage is applied to the dummy junction areas through the bias contact.