Adhesive film and method for manufacturing semiconductor device

An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Usugi Shinichi, Morimoto Akimitsu, Igarashi Kouji
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS PERFORMING OPERATIONS POLISHES SEMICONDUCTOR DEVICES TRANSPORTING USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	An adhesive film of the present invention includes a base material layer and a self-peeling adhesive layer laminated therein. The base material layer has a thermal contraction percentage in a direction of flow (thermal contraction percentage in an MD direction) and a thermal contraction percentage in an orthogonal direction with respect to the direction of flow (thermal contraction percentage in a TD direction) that satisfy the following conditions: (1) after heating at 150° C. for 30 minutes, 0.4≦\|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction\|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≦2%, and (2) after heating at 200° C. for 10 minutes, 0.4≦\|thermal contraction percentage in MD direction/thermal contraction percentage in TD direction\|≦2.5 and average of thermal contraction percentage in MD direction and thermal contraction percentage in TD direction≧3%.