Voltage-tunable magnetic devices for communication applications

Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which underg...

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Bibliographische Detailangaben
Hauptverfasser:	Naik Vinayak Bharat, Datta Deepanjan, Kota Murali V R M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.