Formulations for producing indium oxide-containing layers, process for producing them and their use

Formulations for producing indium oxide-containing layers, process for producing them and their use

The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl in a molar ratio of from 8:1 to 20...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Steiger Juergen, Hoppe Arne, Merkulov Alexey
Format: Patent
Sprache:eng
Schlagworte:
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.