Semiconductor structure and manufacturing method thereof

Semiconductor structure and manufacturing method thereof

A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the fir...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lei Yi-Yang, Huang Tsung Lung, Liu Kuo-Chio, Huang Isaac, Liu Chung-Shi, Yang Sheng-Pin, Wang Hsi-Ching, Ku Chin-Yu, Chang Kuo-Pin, Kalnitsky Alexander, Yu Chen-Hua, Kuo Cheng-Yu, Hsieh Ching-Hua, Wu Kai-Di, Liao De-Dui
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.