Method and structure for gap filling improvement
The present disclosure provides a method for forming a semiconductor structure. The method includes providing a substrate including a plurality of fin structures on the substrate; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first d...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure provides a method for forming a semiconductor structure. The method includes providing a substrate including a plurality of fin structures on the substrate; coating a first solution on the substrate to form a first dielectric layer; and coating a second solution on the first dielectric layer to form a second dielectric layer to cover the fin structures. The first solution has a first viscosity. The second solution has a second viscosity. In some embodiments, the second viscosity is greater than the first viscosity. |
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