Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same

Semiconductor device including Schottky barrier diode and power MOSFETs and a manufacturing method of the same

In a non-insulated DC-DC converter having a circuit in which a power MOS*FET high-side switch and a power MOS*FET low-side switch are connected in series, the power MOS*FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS*FET low-side switch are formed with...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Uno Tomoaki, Shiraishi Masaki, Matsuura Nobuyoshi
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
BASIC ELECTRIC ELEMENTS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a non-insulated DC-DC converter having a circuit in which a power MOS*FET high-side switch and a power MOS*FET low-side switch are connected in series, the power MOS*FET low-side switch and a Schottky barrier diode to be connected in parallel with the power MOS*FET low-side switch are formed within one semiconductor chip. The formation region SDR of the Schottky barrier diode is disposed in the center in the shorter direction of the semiconductor chip, and on both sides thereof, the formation regions of the power MOS*FET low-side switch are disposed. From the gate finger in the vicinity of both long sides on the main surface of the semiconductor chip toward the formation region SDR of the Schottky barrier diode, a plurality of gate fingers are disposed so as to interpose the formation region SDR between them.