Power semiconductor device

A power semiconductor device includes: a first MOSFET having a first conductivity type including a first source, a first drain, and a first gate; a second MOSFET having a first conductivity type including a second drain, a second source electrically coupled to the first source, and a second gate ele...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kawasaki Katsuhisa, Takiguchi Masaaki
Format: Patent
Sprache:eng
Schlagworte:
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