Power semiconductor device

A power semiconductor device includes: a first MOSFET having a first conductivity type including a first source, a first drain, and a first gate; a second MOSFET having a first conductivity type including a second drain, a second source electrically coupled to the first source, and a second gate ele...

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Bibliographische Detailangaben
Hauptverfasser:	Kawasaki Katsuhisa, Takiguchi Masaaki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A power semiconductor device includes: a first MOSFET having a first conductivity type including a first source, a first drain, and a first gate; a second MOSFET having a first conductivity type including a second drain, a second source electrically coupled to the first source, and a second gate electrically coupled the first gate; and a diode being coupled between the first and second drains. A breakdown voltage of the first MOSFET is higher than that of the second MOSFET