Method for the production of a nitride compound semiconductor layer

Method for the production of a nitride compound semiconductor layer

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:-depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);-desorbing at least some of the nitride compound semiconductor material in the first seed lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lehnhardt Thomas, Peter Matthias, Off Juergen, Bergbauer Werner
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Described is a method for producing a nitride compound semiconductor layer, involving the steps of:-depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);-desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);-depositing a second seed layer (2) comprising a nitride compound semiconductor material; and-growing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).