High voltage level shifter in ultra low power supply memory application

High voltage level shifter in ultra low power supply memory application

A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal ox...

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Hauptverfasser: Ni Hao, Yu Hong, Kwon Yi Jin, Cheng Yu
Format: Patent
Sprache:eng
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BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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creator Ni Hao
Yu Hong
Kwon Yi Jin
Cheng Yu
description A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.
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Yu Hong ; Kwon Yi Jin ; Cheng Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9768778B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>PULSE TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>Ni Hao</creatorcontrib><creatorcontrib>Yu Hong</creatorcontrib><creatorcontrib>Kwon Yi Jin</creatorcontrib><creatorcontrib>Cheng Yu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ni Hao</au><au>Yu Hong</au><au>Kwon Yi Jin</au><au>Cheng Yu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>High voltage level shifter in ultra low power supply memory application</title><date>2017-09-19</date><risdate>2017</risdate><abstract>A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
title High voltage level shifter in ultra low power supply memory application
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