High voltage level shifter in ultra low power supply memory application

High voltage level shifter in ultra low power supply memory application

A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal ox...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ni Hao, Yu Hong, Kwon Yi Jin, Cheng Yu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.