Oxide semiconductor thin film and thin film transistor

Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline...

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Bibliographische Detailangaben
Hauptverfasser:	Nakayama Tokuyuki, Nishimura Eiichiro, Iwara Masashi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a β-Ga2O3-type structure, or a GaInO3 phase having a β-Ga2O3-type structure and a (Ga, In)2O3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.