Semiconductor laser and optical integrated light source including the same

A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Gotoda Mitsunobu, Takabayashi Masakazu
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor laser according to the present invention includes an active layer, a guide layer laminated on the active layer, a diffraction grating formed along a light emission direction in the guide layer, an upper electrode provided above the guide layer, and a lower electrode provided below the active layer. The diffraction grating includes a current-injection diffraction grating and current-non-injection diffraction gratings provided both in front of and in back of the current-injection diffraction grating. Phase shifters are individually provided at a central portion of the current-injection diffraction grating and at boundaries between the current-injection diffraction grating and the current-non-injection diffraction gratings. The upper electrode is provided above the current-injection diffraction grating and is not provided above the current-non-injection diffraction gratings.