Tunnel thin film transistor with hetero-junction structure

This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero-junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is...

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Bibliographische Detailangaben
Hauptverfasser:	Hong John Hyunchul, Nomura Kenji
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DISPLAY EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEALS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	This disclosure provides thin film transistors (TFTs) including p-n hetero-junction structures. A p-n hetero-junction structure may include a junction between a narrow bandgap material and a wide bandgap material. The narrow bandgap material, which may be an oxide, nitride, selenide, or sulfide, is the active channel material of the TFT and may provide relatively high carrier mobility. The hetero-junction structures facilitate band-to-band tunneling and suppression of TFT off-currents. In various implementations, the TFTs may be formed on flexible substrates and have low temperature processing capabilities.