Non-volatile semiconductor devices

Non-volatile semiconductor devices

A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ahn Jae-Young, Lee Jeon-Il, Lim Hun-Hyeong, Yun Ju-Mi, Noh Young-Jin, Park Kwang-Min, Yon Guk-Hyon, Son Young-Seon, Yoo Dong-Chul, Ra Joong-Yun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device is provided as follows. A tunnel insulation layer is disposed on a substrate. The tunnel insulation layer includes a first silicon oxide layer, a second silicon oxide layer, and a silicon layer interposed between the first silicon oxide layer and the second silicon oxide layer. The silicon layer has a thickness smaller than a thickness of each of the first silicon oxide layer and the second silicon oxide layer. A gate pattern is disposed on the tunnel insulation layer.