Semiconductor device having a field-effect structure and a nitrogen concentration profile
A semiconductor device includes a silicon semiconductor body having a main surface and a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm. The nitrog...
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| Zusammenfassung: | A semiconductor device includes a silicon semiconductor body having a main surface and a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm. The nitrogen concentration increases with a distance from the main surface at least in the first portion. The semiconductor device further includes a field-effect structure arranged next to the main surface. |
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