Semiconductor device and method for manufacturing the same

A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC substrate, having a first surface, and having a lower first-conductivity-type impurity concentration than the SiC substrate, first second-conductivity-type SiC regions provided in the first surface of the SiC layer, second second-conductivity-type SiC regions provided in the first SiC regions and having a higher second-conductivity-type impurity concentration than the first SiC region, silicide layers provided on the second SiC regions and having a second surface, a difference between a distance from the SiC substrate to the second surface and a distance from the SiC substrate to the first surface being equal to or less than 0.2 μm, a first electrode provided to contact with the SiC layer and the silicide layers, and a second electrode provided to contact with the SiC substrate.