Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-ba...

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Bibliographische Detailangaben
Hauptverfasser:	Lee Han-Song, Kwak Taek-Soo, Na Yoong-Hee, Kim Go-Un, Bae Jin-Hee, Yun Hui-Chan, Song Hyun-Ji, Kim Mi-Young, Kim Bong-Hwan, Park Eun-Su, Hong Seung-Hee, Lim Sang-Hak, Han Kwen-Woo, Kim Sang-Kyun
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL BASIC ELECTRIC ELEMENTS CABLES CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CONDUCTORS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS INSULATORS MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PERFORMING OPERATIONS POLISHES PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SPRAYING OR ATOMISING IN GENERAL THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.