Ultra high performance silicon carbide gate drivers

Ultra high performance silicon carbide gate drivers

A system includes a SiC semiconductor power device; a power supply board that is configured to provide power to a first gate driver board via a connector; the first gate driver board that is coupled and configured to provide current to the SiC semiconductor power device, wherein the first gate drive...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Glaser John Stanley, Nasadoski Jeffrey Joseph, Schutten Michael Joseph, Tao Fengfeng, Harfman-Todorovic Maja
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
PRINTED CIRCUITS
PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:A system includes a SiC semiconductor power device; a power supply board that is configured to provide power to a first gate driver board via a connector; the first gate driver board that is coupled and configured to provide current to the SiC semiconductor power device, wherein the first gate driver board is coupled to the power supply board via the connector, and wherein the first gate driver board is separated from the power supply board; and an interconnect board that is coupled to the first gate driver board, wherein the interconnect board is configured to couple the first gate driver board a second gate driver board.