Switch improvement using layout optimization

Switch improvement using layout optimization

Chip structures having wiring coupled with the device structures of a high frequency switch and methods for fabricating such chip structures. A transistor is formed that includes a first source/drain region, a second source/drain region, and a first gate electrode having a first width aligned in a f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zierak Michael, Sundaram Ananth, Joseph Alvin, Konduru Srikumar, Swaminathan Balaji
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Chip structures having wiring coupled with the device structures of a high frequency switch and methods for fabricating such chip structures. A transistor is formed that includes a first source/drain region, a second source/drain region, and a first gate electrode having a first width aligned in a first direction. A wiring level is formed that includes a wire coupled with the first source/drain region. The wire has a length aligned in a second direction that is different from the first direction.