Method and apparatus for depositing amorphous silicon film

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes a...

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Bibliographische Detailangaben
Hauptverfasser: Kim Hai-Won, Jung Woo-Duck, Oh Wan-Suk, Shin Seung-Woo, Cho Sung-Kil, Choi Ho-Min, Lee Koon-Woo
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).