Alignment exposure method and method of fabricating display substrate

An alignment exposure method and a method for fabricating a display substrate are disclosed. The alignment exposure method includes a first alignment exposure process and a second alignment exposure process. Multiple groups of alignment marks are provided at an edge of at least one side of the subst...

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Bibliographische Detailangaben
Hauptverfasser:	Wu Bin, Li Kun, Ren Lizhi, Yu Xuequan, Shen Wenjun, Gao Yadong
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTROGRAPHY FREQUENCY-CHANGING HOLOGRAPHY MATERIALS THEREFOR NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	An alignment exposure method and a method for fabricating a display substrate are disclosed. The alignment exposure method includes a first alignment exposure process and a second alignment exposure process. Multiple groups of alignment marks are provided at an edge of at least one side of the substrate in the first alignment exposure process. At least one group of mark structures are provided at an edge of at least one side of a mask employed in the second alignment exposure process. In multiple mask alignment processes in the second alignment exposure process, each group of the at least one group of the mark structures of the mask are aligned with groups of the alignment marks at a corresponding side of the substrate group by group. The alignment exposure method is employed to realize alignment exposure of a substrate with a size larger than a size of a mask.