Dual-channel field effect transistor device having increased amplifier linearity

A dual-channel field effect transistor (FET) device having increased amplifier linearity and a method of manufacturing same are disclosed. In an embodiment, the device includes a channel layer having a top surface and provided within a channel between a source electrode and a drain electrode. A barrier layer is formed on the channel layer in alternating first and second barrier thicknesses along the channel. The first barrier thicknesses form thinner regions and the second barrier thicknesses form thicker regions. A gate electrode is deposited on the barrier layer. The thinner regions have a first pinch-off voltage and the thicker regions have a larger second pinch-off voltage, such that the thinner and thicker regions are configured to turn on at different points on a drain current-gate voltage transfer curve. Transfer curve linearity is increased as a function of the gate voltage.