Image sensor having vertical transfer gate for reducing noise and electronic device having the same

Image sensor having vertical transfer gate for reducing noise and electronic device having the same

An image sensor may include: a photoelectric conversion element; a transfer gate formed over the photoelectric conversion element; a plurality of active pillars electrically coupled to the photoelectric conversion element by penetrating the transfer gate; a reset transistor coupled to the plurality...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Oh Dongyean
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An image sensor may include: a photoelectric conversion element; a transfer gate formed over the photoelectric conversion element; a plurality of active pillars electrically coupled to the photoelectric conversion element by penetrating the transfer gate; a reset transistor coupled to the plurality of active pillars; and a source follower transistor having a gate electrically coupled to one or more active pillars among the plurality of active pillars.