Silicon-based backplane structures and methods for display applications
Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not...
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creator | Nguyen Tue Kumar Srinivas H Kumar Ananda H |
description | Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US9698176B1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US9698176B1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US9698176B13</originalsourceid><addsrcrecordid>eNqNyz0OwjAMQOEsDAi4gy_QoUIqdAXxsxfmyk1cETXEVuwO3J4OHIDpLd9bu1sXU_ScqwGVAgzoJ0mYCdTK7G0upIA5wJvsxUFh5AIh6mI-gCLLixY569atRkxKu183Dq6Xx_lekXBPKugpk_XPrm3aY31oTvX-D_IFSEg0Zw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Silicon-based backplane structures and methods for display applications</title><source>esp@cenet</source><creator>Nguyen Tue ; Kumar Srinivas H ; Kumar Ananda H</creator><creatorcontrib>Nguyen Tue ; Kumar Srinivas H ; Kumar Ananda H</creatorcontrib><description>Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170704&DB=EPODOC&CC=US&NR=9698176B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170704&DB=EPODOC&CC=US&NR=9698176B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Nguyen Tue</creatorcontrib><creatorcontrib>Kumar Srinivas H</creatorcontrib><creatorcontrib>Kumar Ananda H</creatorcontrib><title>Silicon-based backplane structures and methods for display applications</title><description>Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyz0OwjAMQOEsDAi4gy_QoUIqdAXxsxfmyk1cETXEVuwO3J4OHIDpLd9bu1sXU_ScqwGVAgzoJ0mYCdTK7G0upIA5wJvsxUFh5AIh6mI-gCLLixY569atRkxKu183Dq6Xx_lekXBPKugpk_XPrm3aY31oTvX-D_IFSEg0Zw</recordid><startdate>20170704</startdate><enddate>20170704</enddate><creator>Nguyen Tue</creator><creator>Kumar Srinivas H</creator><creator>Kumar Ananda H</creator><scope>EVB</scope></search><sort><creationdate>20170704</creationdate><title>Silicon-based backplane structures and methods for display applications</title><author>Nguyen Tue ; Kumar Srinivas H ; Kumar Ananda H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US9698176B13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Nguyen Tue</creatorcontrib><creatorcontrib>Kumar Srinivas H</creatorcontrib><creatorcontrib>Kumar Ananda H</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nguyen Tue</au><au>Kumar Srinivas H</au><au>Kumar Ananda H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silicon-based backplane structures and methods for display applications</title><date>2017-07-04</date><risdate>2017</risdate><abstract>Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.</abstract><oa>free_for_read</oa></addata></record> |
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title | Silicon-based backplane structures and methods for display applications |
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