Silicon-based backplane structures and methods for display applications

Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not...

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Bibliographische Detailangaben
Hauptverfasser: Nguyen Tue, Kumar Srinivas H, Kumar Ananda H
Format: Patent
Sprache:eng
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Zusammenfassung:Displays can be fabricated using driver transistors formed with high quality semiconductor channel materials, and switching transistors formed with low quality semiconductor channel materials. The driver transistors can require high forward current to drive emission of the OLED pixels, but might not require very low leakage current. The switching transistors can require low leakage current to allow the pixel capacitor to retain the signal level for accurate OLED device emission, preventing abnormal displays or cross talks.