Technique for repairing a reflective photo-mask

During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information specifying a defect associated with a location on a top surface of the reflective photo-mask, the modification to the reflective photo-mask is calculated. For example, the calcul...

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Bibliographische Detailangaben
Hauptverfasser:	Li Ying, Satake Masaki
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CALCULATING CINEMATOGRAPHY COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information specifying a defect associated with a location on a top surface of the reflective photo-mask, the modification to the reflective photo-mask is calculated. For example, the calculation may involve an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to calculate the modification at an object plane in the photo-lithographic process. Note that the modification includes a material added to the top surface of the reflective photo-mask using an additive fabrication process. Moreover, the modification is proximate to the location.