Semiconductor device and method of manufacturing the same
According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface o...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface of the etched portion of the substrate between the grooves is higher than a bottom surface of the groove. A conductive layer is formed to fill the grooves. The conductive layer is etched to form conductive patterns in the grooves, respectively. |
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