Semiconductor structure and process for forming plug including layer with pulled back sidewall part

Semiconductor structure and process for forming plug including layer with pulled back sidewall part

A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titani...

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Hauptverfasser: Chen Pin-Hong, Hsu Chia Chang, Hsu Chi-Mao, Huang Shu Min, Lai Kuo-Chih, Chiu Chun-Chieh, Huang Hsin-Fu, Chen Li-Han, Tsai Min-Chuan
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Chen Pin-Hong
Hsu Chia Chang
Hsu Chi-Mao
Huang Shu Min
Lai Kuo-Chih
Chiu Chun-Chieh
Huang Hsin-Fu
Chen Li-Han
Tsai Min-Chuan
description A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structure and process for forming plug including layer with pulled back sidewall part
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