Semiconductor structure and process for forming plug including layer with pulled back sidewall part

Semiconductor structure and process for forming plug including layer with pulled back sidewall part

A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titani...

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Bibliographische Detailangaben
Hauptverfasser: Chen Pin-Hong, Hsu Chia Chang, Hsu Chi-Mao, Huang Shu Min, Lai Kuo-Chih, Chiu Chun-Chieh, Huang Hsin-Fu, Chen Li-Han, Tsai Min-Chuan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.