Vertical thin film transistors with surround gates

Vertical thin film transistors with surround gates

A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge secti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Hayashi Manabu, Itou Ryousuke, Maede Takuro, Takaki Seje, Nakada Akira, Kajiwara Kengo, Yamada Tetsuya
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method is provided that includes forming a transistor by forming a first a rail gate disposed in a first direction above a substrate, forming a second rail gate disposed in a second direction above the substrate, the second direction perpendicular to the first direction, and forming a bridge section disposed between the first rail gate and the second rail gate.