CMOS image sensor and a method of forming the same

CMOS image sensor and a method of forming the same

A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.

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Bibliographische Detailangaben
Hauptverfasser: Wu Yang, Patrick Inna, Kim Kihong, Yu Feixia, Cheung Desmond
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A complementary metal-oxide-semiconductor (CMOS) image sensor includes an implant region of a second type formed in a crystalline layer of a first type. A channel of a transfer gate entirely covers the implant region, which partially joins a photodiode, a doped well and a floating diffusion node.