Magnetoresistive element having a magnetic layer including O

According to one embodiment, a magnetoresistive element includes a first magnetic layer including O and one of Co, Fe, Ni and Mn, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a first electrode connected to the first magnetic layer, a second electrode con...

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Bibliographische Detailangaben
Hauptverfasser:	Amano Minoru, Kitagawa Eiji
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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Beschreibung
Zusammenfassung:	According to one embodiment, a magnetoresistive element includes a first magnetic layer including O and one of Co, Fe, Ni and Mn, a second magnetic layer, a nonmagnetic layer between the first and second magnetic layers, a first electrode connected to the first magnetic layer, a second electrode connected to the second magnetic layer, and a resistive layer including N between the first magnetic layer and the first electrode.