Devices, systems, and methods for ion trapping

Devices, systems, and methods for ion trapping

Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.

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Bibliographische Detailangaben
1. Verfasser: Youngner Daniel
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.