Ultra low power temperature insensitive current source with line and load regulation

A temperature insensitive sub-nA current reference is presented with pA-range power overhead. The main concept is to linearly reduce the gate voltage of a sub-threshold-biased MOSFET as temperature increases, in order to compensate for exponential dependence of drain current on temperature. For exam...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jang Taekwang, Sylvester Dennis, Choi Myungjoon, Lee Inhee, Blaauw David T
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A temperature insensitive sub-nA current reference is presented with pA-range power overhead. The main concept is to linearly reduce the gate voltage of a sub-threshold-biased MOSFET as temperature increases, in order to compensate for exponential dependence of drain current on temperature. For example, a MOSFET-only, 20 pA, 780 ppm/° C. current reference that consumes 23 pW is disclosed, marking the lowest reported power among current references. The circuit exploits sub-threshold-biased MOSFETs and a complementary-to-absolute temperature (CTAT) gate voltage to compensate for temperature dependency. The design shows high immunity to supply voltage of 0.58%/V and a load sensitivity of 0.25%/V.