Method of producing epitaxial silicon wafer and epitaxial silicon wafer

Provided is a method of producing an epitaxial silicon wafer which has high flatness at the peripheral portion and an epitaxial silicon wafer obtained by the method. In the method of producing an epitaxial silicon wafer, an epitaxial layer is formed on the top surface of a silicon wafer with a chamf...

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Bibliographische Detailangaben
Hauptverfasser:	Narahara Kazuhiro, Masuda Sumihisa
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a method of producing an epitaxial silicon wafer which has high flatness at the peripheral portion and an epitaxial silicon wafer obtained by the method. In the method of producing an epitaxial silicon wafer, an epitaxial layer is formed on the top surface of a silicon wafer with a chamfered end having a width of 200 μm or less, which surface has a surface orientation of the (100) plane or the (110) plane.