Stacked memory allowing variance in device interconnects

A stacked memory allowing variance in device interconnects. An embodiment of a memory device includes a system element for the memory device, the system element including multiple pads, and a memory stack connected with the system element, the memory stack having one or more memory die layers, a connection of the system element and the memory stack including interconnects for connecting a first memory die layer and the plurality of pads of the system element. For a single memory die layer in the memory stack, a first subset of the plurality of pads is utilized for a first group of interconnects for the connection of the system element and the memory stack, and for two or more memory die layers, the first subset and an additional second subset of the plurality of pads are utilized for the first group of interconnects and a second group of interconnects for the connection of the system element and the memory stack.