Methods for evaluating semiconductor device structures

Methods for evaluating semiconductor device structures are provided. In one example, a method includes forming a support layer on a first side of a lamellar sample portion of the semiconductor device structure. The lamellar sample portion has a second side opposite the first side, a target analysis...

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Bibliographische Detailangaben
Hauptverfasser:	Liu Binghai, Lam Jeffrey, Zhao Si Ping, Zhu Jie, Er Eddie
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Methods for evaluating semiconductor device structures are provided. In one example, a method includes forming a support layer on a first side of a lamellar sample portion of the semiconductor device structure. The lamellar sample portion has a second side opposite the first side, a target analysis area on or proximate the first side, and a first thickness defined from the first side to the second side. The second side is milled to form a reduced thickness lamellar-supported sample portion that has a milled second side opposite the first side. The support layer is removed from the reduced thickness lamellar-supported sample portion to form a reduced thickness lamellar sample portion having a second thickness that is defined from the first side to the milled second side and that is less than the first thickness. The target analysis area of the reduced thickness lamellar sample portion is evaluated.